A Survey of Test and Reliability Solutions for Magnetic Random Access Memories
نویسندگان
چکیده
Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a significant part system power consumption. Though widely used, nonvolatile Flash memories still suffer from several drawbacks. Magnetic random access (MRAMs) have potential mitigate shortcomings. Moreover, it is predicted that they could be used for DRAM SRAM replacement. However, are prone manufacturing defects runtime failures as any other type memory. This article provides an up-to-date practical coverage MRAM test reliability solutions existing literature. After some background on technologies, defectiveness issues discussed, well functional fault models MRAM. dedicated summarized description improvement methods developed so far various technologies. The last this gives perspectives hot topic.
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 2021
ISSN: ['1558-2256', '0018-9219']
DOI: https://doi.org/10.1109/jproc.2020.3029600